Gallium Nitride: Structure, Thermal Properties and Applications

Kiera Olivia Peak (Editor)

Series: Materials Science and Technologies
BISAC: SCI013000

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Gallium nitride (GaN), a member of the family of III-V semiconductor compounds, has been investigated intensively and have been found to have extensive applications. Recent developments have suggested that GaN may be used as an excellent host material for light-emitting devices (LEDs) that operate in the blue and ultraviolet region, due to its wide and direct band gap.

Nano-materials often present novel properties that are different from the corresponding bulk materials due to their unique structures, high specific surface area and quantum confinement effects. This book discusses several topics on the structure, thermal properties and applications of GaN. Some of these topics include the effects of radiation damage in GaN and and related materials; low-dimensional GaN; structural and dielectric properties of the GaN and silica nanoparticles investigated by molecular dynamics; and GaN bulk and nanostructures for spintronic applications. (Imprint: Nova)

Preface

Chapter 1 - Effects of Radiation Damage in GaN and Related Materials (pp. 1-32)
S. J. Pearton, Fan Ren, Y. H. Hwang, Shun Li, Yueh-Ling Hsieh, Alexander Y. Polyakov and Jihyun Kim (Department of Materials Science and Engineering, University of Florida, Gainesville, FL, USA, and others)

Chapter 2 - Mechanisms Determining Reliability in Electrically Stressed AlGaN/GaN High Electron Mobility Transistors (pp. 33-58)
F. Ren Y.-H. Hwang, Shun Li, Yueh-Ling Hsieh, P. G. Whiting, M. R. Holzworth, S. J. Pearton and K. S. Jones (Department of Chemical Engineering, University of Florida, Gainesville, Florida, USA, and others)

Chapter 3 - Low-Dimensional GaN: Structure, Synthesis and Physical Properties (pp. 59-82)
Dongwei Xu, Haiying He and Ravindra Pandey (Department of Physics, Michigan technological University, Houghton, MI, USA, and others)

Chapter 4 - Wurtzite Gallium Nitride Nanostructures: Syntheses and Growth Mechanisms (pp. 83-118)
Yucheng Lan, Jianye Li and Zhifeng Ren (Department of Physics and Engineering Physics, Morgan State University, Baltimore, MD, USA, and others)

Chapter 5 - GaN Schottky Contacts and Their Applications (pp. 119-166)
R. X. Wang, S. J. Xu and S. Fung (Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China, and others)

Chapter 6 - GaN MOSFET on AlGaN/GaN Heterostructure (pp. 167-182)
Jin-Ping Ao (The University of Tokushima, Japan)

Chapter 7 - Structural and Dielectric Properties of the Gallium Nitride and Silica Nanoparticles Investigated by Molecular Dynamics (pp. 183-208)
Alexander Y. Galashev (Institute of Industrial Ecology, Ural Division, Russian Academy of Sciences, Russia)

Chapter 8 - AlGaN/GaN-Based Lateral-Type Schottky Barrier Diode with Bonding Pad over Active Structure Prepared on Sapphire Substrate (pp. 209-230)
Jae-Hoon Lee (Discrete Development Team, System LSI, Samsung Electronics Co., Ltd, Giheung, Korea)

Chapter 9 - Improvement in Heat Dissipation Capability of GaN-Based Light-Emitting Diodes (pp. 231-250)
Ray-Hua Horng, Sin-Liang Ou and Dong-Sing Wuu (Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung, Taiwan, and others)

Chapter 10 - Gallium Nitride Bulk and Nanostructures for Spintronic Application (pp. 251-266)
E. Salmani, O. Mounkachi, H. Ez-Zahraouy, H. El Moussaoui, R. Masrour, M.Hamedoun and A. Benyoussef (Institute for Nanomaterials and Nanotechnologies, MAScIR, Rabat, Morocco, and others)

Chapter 11 - Indium Gallium Nitride (InGaN) for Photovoltaic Application (pp. 267-280)
O. Mounkachi, E. Salmani, H. Ez-Zahraouy, M. Hamedoun and A. Benyoussef (Institute for Nanomaterials and Nanotechnologies, MAScIR, Rabat, Morocco, and others)

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