Table of Contents

Table of Contents

Preface

Chapter 1 – Effects of Radiation Damage in GaN and Related Materials (pp. 1-32)
S. J. Pearton, Fan Ren, Y. H. Hwang, Shun Li, Yueh-Ling Hsieh, Alexander Y. Polyakov and Jihyun Kim (Department of Materials Science and Engineering, University of Florida, Gainesville, FL, USA, and others)

Chapter 2 – Mechanisms Determining Reliability in Electrically Stressed AlGaN/GaN High Electron Mobility Transistors (pp. 33-58)
F. Ren Y.-H. Hwang, Shun Li, Yueh-Ling Hsieh, P. G. Whiting, M. R. Holzworth, S. J. Pearton and K. S. Jones (Department of Chemical Engineering, University of Florida, Gainesville, Florida, USA, and others)

Chapter 3 – Low-Dimensional GaN: Structure, Synthesis and Physical Properties (pp. 59-82)
Dongwei Xu, Haiying He and Ravindra Pandey (Department of Physics, Michigan technological University, Houghton, MI, USA, and others)

Chapter 4 – Wurtzite Gallium Nitride Nanostructures: Syntheses and Growth Mechanisms (pp. 83-118)
Yucheng Lan, Jianye Li and Zhifeng Ren (Department of Physics and Engineering Physics, Morgan State University, Baltimore, MD, USA, and others)

Chapter 5 – GaN Schottky Contacts and Their Applications (pp. 119-166)
R. X. Wang, S. J. Xu and S. Fung (Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China, and others)

Chapter 6 – GaN MOSFET on AlGaN/GaN Heterostructure (pp. 167-182)
Jin-Ping Ao (The University of Tokushima, Japan)

Chapter 7 – Structural and Dielectric Properties of the Gallium Nitride and Silica Nanoparticles Investigated by Molecular Dynamics (pp. 183-208)
Alexander Y. Galashev (Institute of Industrial Ecology, Ural Division, Russian Academy of Sciences, Russia)

Chapter 8 – AlGaN/GaN-Based Lateral-Type Schottky Barrier Diode with Bonding Pad over Active Structure Prepared on Sapphire Substrate (pp. 209-230)
Jae-Hoon Lee (Discrete Development Team, System LSI, Samsung Electronics Co., Ltd, Giheung, Korea)

Chapter 9 – Improvement in Heat Dissipation Capability of GaN-Based Light-Emitting Diodes (pp. 231-250)
Ray-Hua Horng, Sin-Liang Ou and Dong-Sing Wuu (Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung, Taiwan, and others)

Chapter 10 – Gallium Nitride Bulk and Nanostructures for Spintronic Application (pp. 251-266)
E. Salmani, O. Mounkachi, H. Ez-Zahraouy, H. El Moussaoui, R. Masrour, M.Hamedoun and A. Benyoussef (Institute for Nanomaterials and Nanotechnologies, MAScIR, Rabat, Morocco, and others)

Chapter 11 – Indium Gallium Nitride (InGaN) for Photovoltaic Application (pp. 267-280)
O. Mounkachi, E. Salmani, H. Ez-Zahraouy, M. Hamedoun and A. Benyoussef (Institute for Nanomaterials and Nanotechnologies, MAScIR, Rabat, Morocco, and others)

Index