Thin Film Chemical Vapor Deposition in Electronics: Equipment, Methodology and Thin Film Growth Experience

Vladislav Yu. Vasilyev, PhD
Novosibirsk State Technical University and SibIS LLC, Russian Federation

Series: Electronics and Telecommunications Research, Chemistry Research and Applications
BISAC: TEC008090

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This monograph is a summary of equipment, methodology and thin film growth experience obtained by the author during his 30 years of research work in the field of Integrated Circuit (IC) device technology. The monograph is concerned with the analysis of different aspects of different types of inorganic thin films grown by Chemical Vapor Deposition (CVD) methods and dedicated to the use in IC technology and production. The author discusses the methodology issues of thin film CVD and the fundamentals of the chemical kinetics of thin film growth. The main core of this monograph is the analysis of thin film CVD kinetics features obtained using different types of reactors, chemical compounds, process conditions.

The monograph covers a wide variety of CVD-related aspects: equipment analysis, chemical compound features, CVD process methodology analysis, CVD kinetic features and their quantitative characterization, implementation of obtained numerical equations for thin film step coverage and gap-fill issues, interrelation of the film properties and CVD process features, and CVD process classification.

The author would like to highlight that all the data presented in this book has been experimentally obtained by a number of research groups. Most of the data has been double-checked and confirmed. Surely, some data could not be repeated because it was obtained a long time ago using some specific deposition tools and processes. Nevertheless, the author would like to stress that he considers this book as an attempt to create a whole view on the thin film CVD for IC device technology applications. In this regard, the author has tried to generalize a large amount of experimental data, selecting the most common features of the film growth, composition, structure, and properties.

A large body of reviewed information has been divided into the three Parts and 16 Chapters. The main contents of these Parts are: (1) CVD equipment, process and thin film methodology, (2) examples of thin film growth kinetics, and (3) thin film CVD process features. In the last Chapter of the monograph the author summarizes the main CVD development trends along with IC device technology development and makes some forecasts for CVD future developments trends and issues. (Imprint: Nova)

Preface

List of Abbreviations

List of Important Symbols

Part 1. CVD Equipment, Process and Thin Film Methodology

Chapter 1 - Basic Thin Film Materials in Integrated Circuit Technology (pp. 3-14)

Chapter 2 - General Thin Film CVD Characterization (pp. 15-24)

Chapter 3 - Basic Flow CVD Reactor Designs and Process Methodology (pp. 25-44)

Chapter 4 - Pulsed CVD Tools and Process Methodology (pp. 45-62

Chapter 5 - Brief Review on CVD Thin Film Analysis Techniques (pp. 63-76)

Chapter 6 - Methodology of Thin Film CVD Kinetic Studies (pp. 77-92)

Part 2. Examples of Thin Film Growth Kinetics Studies

Chapter 7 - Semiconductor Thin Film CVD: Polysilicon (pp. 95-110)

Chapter 8 - Dielectric Thin Film CVD: Silicon Nitride (pp. 111-134)

Chapter 9 - Dielectric Thin Film CVD: Silicon Dioxide (pp. 135-154)

Chapter 10 - Dielectric Thin Film CVD: Silicate Glasses (pp. 155-176)

Chapter 11 - Conductive Thin Film CVD: Ruthenium Metal (pp. 177-200)

Part 3. Thin Film CVD Process Features

Chapter 12 - Basic Aerosol Formation Effects at CVD (pp. 203-220)

Chapter 13 - Thin Film Process Classification and Schemes (pp. 221-230)

Chapter 14 - Thin Film Step Coverage and Gap-Fill (pp. 231-260)

Chapter 15 - Brief Overview on Interrelation of Thin Film CVD, Composition, Structure and Properties (pp. 261-276)

Chapter 16 - Summary and Future Trends (pp. 277-290)

Conclusion

Acknowledgments

Author Biography

Index

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