Silicon Carbide Radiation Detectors


Marzio De Napoli (Authors) – Istituto Nazionale di Fisica Nucleare (INFN), Italy

Series: Energy Science, Engineering and Technology

One of the goals of the actual semiconductor detector research is to find and develop other materials which overcome the limits of the present semiconductors. In this respect the so-called wide-bandgap semiconductors, among which silicon carbide is one of the most promising examples, are the best candidates. Their advantages with respect to traditional semiconductors, namely silicon and germanium, are discussed. This new book examines certain aspects of the interaction of radiation with semiconductors, as well as the basic properties of semiconductor detectors.

Table of Contents

Table of Contents

Remembering Professor Giovanni Raciti

Preface pp. i-xii

Introduction to semiconductor detectors

1. Introduction;pp. 1-14

2. SiC as radiation detector material;pp. 15-33

3. SiC detectors fabrication;pp. 35-78

4. SiC detector characteristics;pp. 79-108

5. Uncharged particles detection;pp. 109-121

6. Radiation damage;pp. 123-145

Index pp. 147-154

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