Polycrystalline Films: Characteristics, Applications and Research

Alfred L. Davis (Editor)

Series: Chemistry Research and Applications
BISAC: SCI013000



Volume 10

Issue 1

Volume 2

Volume 3

Special issue: Resilience in breaking the cycle of children’s environmental health disparities
Edited by I Leslie Rubin, Robert J Geller, Abby Mutic, Benjamin A Gitterman, Nathan Mutic, Wayne Garfinkel, Claire D Coles, Kurt Martinuzzi, and Joav Merrick


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This book provides new research on polycrystalline films. Chapter One reviews the characterization of polycrystalline Cu2ZnSn(SxSe1-x)4 thin-films and solar-cells. Chapter Two explains the chemical vapor deposition process accelerated by the fragments of monomethylsilane. Chapter Three studies the regularities of formation of the nanostructured films of polycrystalline silicon doped with germanium as isovalent impurity. (Imprint: Novinka)


Chapter 1. Characterization of Polycrystalline Cu2ZnSn(SxSe1-x)4 Thin-Films and Solar Cells
Muhammad Monirul Islam, Takeaki Sakurai and Katsuhiro Akimoto (Faculty of Pure and Applied Sciences, Alliance for Research on North Africa (ARENA), University of Tsukuba, Tsukuba, Japan, and others)

Chapter 2. Semiconductor Materials Film Formation Process Assisted by an Acceleration Technique
Hitoshi Habuka (Professor, Yokohama National University, Yokohama, Japan)

Chapter 3. Formation of Nanostructured Films of Polycrystalline Silicon Doped with Germanium
À. À. Kovalevskii, À. S. Strogova and O. M. Komar (Department of Micro- and Nanoelectronics, Belarusian State University of Informatics and Radioelectronics, Minsk, Republic of Belarus)


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