Polycrystalline and Spatially Non-Homogeneous Amorphous Semiconductors and Insulators

Valeri Ligatchev
Department of Physics and Technology of Electrotechnical Materials and Component, Moscow Power Engineering Institute, Moscow, Russia

Series: Physics Research and Technology
BISAC: TEC039000

Clear

$195.00

Volume 10

Issue 1

Volume 2

Volume 3

Special issue: Resilience in breaking the cycle of children’s environmental health disparities
Edited by I Leslie Rubin, Robert J Geller, Abby Mutic, Benjamin A Gitterman, Nathan Mutic, Wayne Garfinkel, Claire D Coles, Kurt Martinuzzi, and Joav Merrick

eBook

Digitally watermarked, DRM-free.
Immediate eBook download after purchase.

Product price
Additional options total:
Order total:

Quantity:

Details

This multidisciplinary book inspires profound understanding of (well-illustrated) intimate relationships between physical parameters and statistical characteristics of confined acoustic phonons and phonon-like excitations in polycrystalline and spatially non-homogeneous amorphous semiconductors and insulators, related to them lattice strain and anisotropy (if any) in sound velocity, features of their near-band-gap and intra-gap electronic and optical characteristics, deformation potential(s), intensity of electron-phonon interactions, rates of the optically- and thermally-induced charge carrier transitions and interband recombination of those, and even key parameters of superconductivity in the heavily boron-doped diamond layers with different crystalline orientations. (Imprint: Nova)

Acknowledgements

Preface

Abstract

Chapter 1. Introduction and Historical Backgrounds

Chapter 2. Generalized Skettrup Model for Density of Electron States in Polycrystalline Semiconductors

Chapter 3. Thermal Equilibrium, ‘Frozen-in’ Phonons, Electron, Optical Spectra and Defects in Amorphous Semiconductors

Chapter 4. DC Electrical Properties of Solids Semiconductors within GSM and ‘Displaced Oscillator’ Approximation

Chapter 5. Fabrication Techniques, Structural and Morphological Characteristics of Amorphous and Polycrystalline Semiconductor and Insulating Layers

Chapter 6. Density of Electron States in Amorphous and Polycrystalline Semiconductors: Experimental Studies and GSM Simulations

Chapter 7. Experimental and Simulated Optical, Electrical and Photoelectrical Parameters of Non-Homogeneous Semiconductors and Insulators

Conclusions and Future Developments

References

About the Authors

Index

Preface
[i] Ligachov, V.A., Proc. 35th Int. Colloq. TH Ilmenau, Ilmenau, DDR, 1990, 4, 56 – 59.
[ii] Ligachov, V.A., Gordeev, V.N., Filikov, V.A. Proc. 7th Int. Conf. Thin Film Phys. Appl. Shanghai, China, April 14 – 17, 1991, SPIE, 1519, 214 – 219.
[iii] Ligachev, V. A.; Gordeev, V.N.; Filikov, V.A.; Suleman, H. Sov. Phys. Semiconductors 1991, 25, 927 – 930.
[iv] Ligachev, V.A.; Filikov, V.A. Sov. Phys. Semiconductors 1992, 26, 865 – 868.
[v] Golikova, O.A.; Domashevskaya, E.P.; Kazanin, M.M.; Kudoyarova, V. Kh.; Mezdrogina, M.M.; Sorokina, K.L.; Terekhov, V.A.; Trostyanskii, S.N. Sov. Phys. Semiconuctors 1989, 23, 281 – 284.
[vi] Ley, L. In Physics of Hydrogenated Amorphous Silicon II. Joannopoulos, J.D.; Lucovsky, G. Ed.; Springer-Verlag, Heidelberg, 1984, pp 140 – 198.
[vii] Ziman, J.M. Models of Disorder. The theoretical physics of homogeneously disordered systems, Cambridge University Press, Cambridge, 1979, pp 1 – 346.
[viii] Bawendi, M.G.; Steigerwald, M. L.; Brus, L.E. Annu. Rev. Phys. Chem. 1990, 41, 477 – 96.
[ix] Nesladek, M.; Meykens, K.; Stals, L.M.; Vanecek, M.; Rosa, J. Phys. Rev. B 1996, 54,

5552 – 5561.
Obraztsov, A.N..; Okushi, H.; Watanabe, H.; Pavlovsky, I. Yu. Phys. Sol. St. 1997, 39, 1594 – 1598.
[xi] Ligachev, V.A. Phys. Sol. St. 1995, 37, 1218 – 1222; ibid 1995, 37, 1879 – 1883, 37, 1884 – 1888.
[xii] Skettrup, T. Phys. Rev. B, 1978, 18, 2622 – 2631.


[xiii] Gazeau, J.-P.; Klauder, J. R.; J. Phys. A: Math. Gen. 1999, 32

, 123 – 132.
[xiv] Quantum Theory of Real Materials / Chelikowsky, J.R.; Louie, S.G.; Ed.; Kluwer, Nor, MA, 1996, p.p. 1 – 549.
[xv] Ligatchev, Valeri Alekseevich, ‘Role of Morphology in Formation Electron Spectra, Optical and Electro-Physical Properties of a-Si:H, a-C:H and
a-Si
1-xCx:H Thin Films’; Doctor of Science Dissertation in Specialty 01.04.10 – Physics of Semiconductors and Insulators, Moscow, 1998, p.p. 1 – 419. In Russian: ЛИГАЧЕВ Валерий Алексеевич, “Роль морфологии в формировании электронных спектров, оптических и электрофизических характеристик тонких пленок a-Si:H, a-C:H и a-Si1-xCx:H.” Диссертация на соискание ученой степени доктора физико-математических наук по специальности 01.04.10 – физика полупроводников и диэлектриков. Москва, 1998, стр. 1 – 419.
[xvi] Gan, B.; Ahn, J.; Zhang, Q.; Yoon, S. F.; Rusli, Yu, M. B.; Yu, J.; Ligatchev, V.; Chew, K.; Huang, Q.-F. Diamond and Related Materials 2001, 10, 998 – 1001.


[xvii] Gan, B.; Ahn, J.; Rusli, Zhang, Q.; Yoon, S.F.; Ligatchev, V.; K. Chew, K.; Huang, Q.-F. J. Appl. Phys. 2001, 89, 5747 – 5753.


[xviii] Ligatchev, V. Mat. Res. Soc. Proc. 2001, 664, A.9.8.1 – A.9.8.6.
[xix] Ligatchev, V. Physica B 2003, 337, 333 – 345; ibid 2003, 337, 346 – 356.
[xx] Ligatchev, V.; Gan, B. Diam. Relat. Mater. 2006, 15, 410 – 416.
[xxi] Ligatchev, Valeri, In Focus on condensed matter physics research; Chang, J. V. Ed.; Nova Science Publishers: Hauppauge, NY, 2005; pp 1 – 81.
[xxii] Bouchaud, J.P. J. De Physique I 1992, 2, 1705 – 1713.


[xxiii] Ligatchev, V. Physica B 2004, 348, 420 – 435.

[1] Sun, J.Z.; Webb, D.J.; Naito, M. et al. Phys. Rev. Lett. 1987, 58, 1574 – 1576.
[2] Creasy, W.R.; Brenna J.T. J. Chem. Phys. 1990, 92, 2269 – 2279.
[3] Wang, N.; Yao, B.D. Appl. Phys. Lett. 2001, 78, 4028 – 4030.
[4] Hochbaum, A.I.; Chen, R.; Delgado, P.D.; Liang, W.; Erik C. Garnett, E.C.; Najarian, M.; Majumdar, A.; Yang, P. Nature (London) 2008, 451, 163 – 167.
[5] Uchida, Y.; Taguchi, K.; Nagai, T.; Sugahara, S.; Matsumura, H. Jap. Journ. Appl. Phys. Pt.I 1998, 37, 6369 – 6373.
[6] Jean, J.-H. J. Mater. Res. 1996, 11, 2098 – 2103.
[7] Varadan, V.K.; Xie, J. Proceedings of SPIE 2002, 4936, 435 – 445.
[8] Peters, L. Semicond. Int. 1998, 64, 64 – 68.
[9] Hebard1, A.F.; Haddon, R.C.; Flemming, P.M.; Kortan, A.R. Appl. Phys. Lett., 1991, 59, 2109 – 2111.
[10] Gaponenko, S.V. Optical Properties of Semiconductor Nanocrystals. Cambridge University Press, 1998, p.p. 1 – 245.
[11] Chin, S. K.; Ligatchev, V.: Rustagi, S.C.; Zhao, H.; Samudra, G. S.; Singh, N.; Lo, G. Q.; Kwong, D.-L. IEEE Transactions on Electron Device, 2009, 56, 2312 – 2318.
[12] Bawendi, M.G.; Steigerwald, M. L.; Brus, L.E. Ann. Rev. Phys. Chem. 1990, 41, 477 – 96.
[13] Hu, Bin; Zhang, Xinyi; Zhou, Yingxue; Jin, Changqing; Zhang, Jisen Phys. Rev. B, 1991, 43, 14001 – 14008.
[14] Irimpan, L.; Nampoori, V.P.N.; Radhakrishnan, P.; Deepthy, A.; Krisnan, B. Journ. Appl. Phys. 2007, 102, 063524-1 – 063524-6.
[15] Irimpan, L.; Krishnan, B.; Deepthy, A.; Nampoori, V.P.N.; Radhakrishnan, P. Jour. Phys. D: Applied Physics 2007, 40,

5670 – 5674.
[16] Madelung, O. Introduction to Solid–State Theory, Springer, Heidelberg, 1996, p.p. 1 – 488.
[17] Bhattacharya, R.; Chen, J.; Spangol, P.; Chaudhuri, T. Electrochem. Sol. St. Lett., 2004, 7, D22 – D24.
[18] Fritzsche, H. Thin Solid Films, 1982, 90, 119 – 129.
[19] Reimer, J.; Petrich, M. In Amorphous Silicon and Related Materials, Fritzsche, H.; Ed.; World Scientific, Singapore, 1988, p.p. 3 – 27.
[20] Ley, L. In Physics of Hydrogenated Amorphous Silicon II. Joannopoulos, J.D.; Lucovsky, G. Springer–Verlag, Heidelberg, 1984, p. 140 – 198.
[21] Yu, Peter. Y.; Cardona, Manuel Fundamentals of Semiconductors, Springer, Heidelberg, 1996, p.p. 1 – 617.
[22] Boer, K.W. Survey of Semiconductor Physics, Van Nostrand Reinhold, New–York, New-York 1990, p.p. 1 – 1423.
[23] Anselm, A.I. Introductory to Semiconductor Theory, Mir, Moscow, Englewood, N.J., Prentice–Hall, 1981, p.p. 1 – 160.
[24] Cohen, M.H.; Chou, M.Y.; Economou, E.N.; John, S.; Soukoulis, S.M. IBM J. Res. Develop. 1988, 32, 82 – 91.
[25] Kane, E.O. Phys. Rev. 1963, 131, 79 – 88.
[26] Bonch-Bruevich, V.L. Sov. Phys. Solid State, 1963, 4, 1953 – 1962.
[27] Van Mieghem, P. Rev. Mod. Phys. 1992, 64, 755 – 793.
[28] Kramer, B. Phys. Stat. Sol., 1970, 41, 725 – 733.
[29] Tauc, J. In Amorphous and Liquid Semiconductors, Tauc, J.; Ed.; Plenum Press, New–York, 1984, p.p. 1 – 412.
[30] Abe, S.; Toyazawa, Y. J. Phys. Soc. Jpn. 1981, 50, 2185 – 2194.
[31] O’Leary, S.K.; Zukotynski, S.; Perz, J.M. Phys. Rev. B 1995, 51, 4143 – 4149.
[32] O’Leary, S.K.; Zukotynski, S.; Perz, J.M. Phys. Rev. B 1995, 52, 7795 – 7797.
[33] Halperin, B.I.; Lax, M. Phys. Rev. 1966, 148, 722 – 740.
[34] Halperin, B.I.; Lax, M. Phys. Rev. 1967, 153, 802 – 814.
[35] Sritrakool, W.; Sa–yakanit, V.; Glyde, H.R. Phys. Rev. B 1986, 33, 1199 – 1202.
[36] Greeff, C.W.; Glyde, H.R. Phys. Rev. B., 1995, 51, 1778 – 1783.
[37] John, Sajeev; Soukolis, G.; Cohen, M.H.; Economou, E.N. Phys. Rev. Lett. 1986, 57, 1777 – 1780.
[38] Grein, C.H., John, Sajeev Phys. Rev. B 1987, 36, 7457 – 7468.
[39] S.K. O’Leary and P.K. Lim, J. Appl. Phys. 1997, 82, 3624 – 3626.
[40] Fritzsche, H. J. NonCryst. Sol. 1971, 6, 49 – 71.
[41] Marshall, J.M. Rep. Prog. Phys. 1983, 46, 1235 – 1282.
[42] Grein, C.H.; John, Sajeev Phys. Rev. B 1989, 39, 1140 – 1151.
[43] Grein, C.H.; John, Sajeev Phys Rev B 1990, 41, 7641 – 7646.
[44] John, Sajeev; Chou, M.Y.; Cohen, M.H.; Soukoulis, C.M. Phys. Rev. B 1988, 37, 6963 – 6976.
[45] Richter, H.; Wang, Z.P.; Ley, L. Sol. St. Comm. 1981, 39, 625 – 629.
[46] Campbell, I.H.; Fauchet, P.M. Sol. St. Comm. 1986, 58, 739 – 741.
[47] Lannin, J.S.; Pilione, L.J.; Kshirsagar, S.T. Phys. Rev. B. 1982, 26, 3506 – 3509.
[48] Morell, G.; Katiyar, R.S.; Weisz, S.Z.; Jia, H.; Shinar, J.; Balberg, I. J. Appl. Phys. 1995, 78, 5120 – 5125.
[49] Ager III, J. W.; Veirs, D.K.; Rosenblatt, G.M. Phys. Rev. B 1991, 43, 6491 – 6499.
[50] Yoshikawa, M.; Mori, Y.; Maegawa M. et al. Appl. Phys. Lett. 1993, 62, 3114 – 3116.
[51] Brey, L.; Tejedor, C.; Verges, J.A. Phys. Rev. Lett. 1984, 52, 1840 (the single page).
[52] Alben, R.; Weaire, D.; Smith, J.E.; Brodsky, M.H.; Phys. Rev. B, 1975, 11

, 2271 – 2296.[53] Light Scattering in Solids II: Basic Concepts and Instrumentations, Cardona, M.; G. Guntherodt; Ed.; Topics Appl. Plys., Springer, Berlin, Heidelberg 1982, Vol. 50, p.p. 1 – 351.
[54] Ley, L.; Reichardt, J.; Johnson, R.L. Phys. Rev. Lett. 1982, 49, 1664 – 1667.
[55] Zhang, P.X.; Mitchell, I.V.; Tong, B. Y.; Schultz, P.J.; Lockwood, D.J. Phys. Rev. B. 1994, 50, 17080 – 17084.
[56] Bickham, S.R.; Feldman, J.L. Phys. Rev. B 1998, 57, 12234 – 12238.
[57] Scholten, A.J.; Akimov, A.V.; Dijkhuis, J.I. Phys. Rev. B. 1993, 47, 13910 –13913.
[58] Scholten, A.J.; Dijkhuis, J.I. Phys. Rev. B. 1996, 53, 3837-3840.
[59] Temkin, R.J.; Paul, W.; Connell, G.A.N. Adv. Phys. 1973, 22, 581 – 641.
[60] Postol, T.A.; Falco, Ch. M.; Kampwirth, R.T.; Schuller, K. Phys. Rev. Lett. 1980, 45, 648 – 652.
[61] Bellisent R. In Amorphous Silicon and Related Materials, Fritzsche, H.; Ed.; World Scientific, Singapore, 1988, p.p. 93 – 121.
[62] Leadbetter, A.J.; Rashid, A.A.M.; Richardson, R.M.; Write, A.F.; Knights, J.C. Sol. St. Comm. 1980, 33, 973 – 977.
[63] Leadbetter, A.J.; Rashid, A.A.M.; Colenutt, N.; Write, A.F.; Knights, J.C. Sol. St. Comm. 1981, 38, 957 – 960.
[64] Donovan, T.M.; Heinemann, K. Phys. Rev. Lett. 1971, 27, 1794 – 1796.
[65] Knights, J.C.; Lujan, R.A. Appl. Phys. Lett. 1979, 35, 244 – 246.
[66] Barna, A.; Barna, P.B.; Bodo, Z.; Pocza, J.F.; Poszgai, I.; Radonczi. R. In Proc. 5th Int. Conf. Phys. Amorph. Liq. Semicond. Stuke, J.; Brenig, W.; Ed.; Taylor and Francis, London, 1974, p. 109.
[67] Knights, J.C. J. NonCryst. Sol. 1980, 35-36, 159 – 170.
[68] Palmer, B.J.; Gordon, R.J. Thin Solid Films 1988, 158, 313 – 341.
[69] Messier, R.; Ross, R.C. J. Appl. Phys. 1982, 53, 6220 – 6225.
[70] Perrin, J. J. NonCryst. Sol. 1991, 137and138, 639 – 644.
[71] Ostrikov, K.N.; Kumar, S.; Sugai, H. J. Appl. Phys. 2001, 89, 5919 – 5964.
[72] Wannier, G.H. Phys. Rev. 1949, 76, 438 – 439.
[73] Schokley, W.; Bardeen J. Phys. Rev. 1950, 77, 407 – 408.
[74] Shklovski, B.I.; Efros, A.L. Sov. Phys. JETP, 1971, 33, 468 – 474.
[75] Shklovski, B.I; Efros, A.L. ‘Electronic properties of doped semiconductors’ (Springer, Heidelberg 1984) 388 p.
[76] Overhof, H.; Beyer, W. Phil. Mag. B. 1983, 47, 377 – 392.
[77] Overhof, H. J. NonCryst. Sol. 1984, 66, 261 – 272.
[78] Tauc, J. Mat. Res. Bull. 1970, 5, 721 – 729.
[79] Silver, M.; Pautmeier, L.; Bässler, H. Sol. St. Comm., 1989, 72, 177 – 180.
[80] Baranovskii, S.D.; Hensel, F.; Ruckes, K.; Thomas, P.; Adriaenssens, G.J. J. NonCryst. Sol., 1995, 190, 117 – 122.
[81] Shklovski, B.I.; Efros, A.L. Sov. Phys. Semicond. 1970, 4, 247 – 251.
[82] Kirkpatrick, S. Phys. Rev. Lett. 1971, 27, 1722 – 1725.
[83] Ries, B.

; Bassler, H.; Shonherrn, G.; Silver, M., Snow, E. J. NonCryst. Sol. 1984, 66, 243 – 249.
[84] Schiff, E.A. J. NonCryst. Sol., 1995, 190, 1 – 8.
[85] Howard, J.A.; Street, R.A. Phys. Rev. B, 1991, 44, 7935 – 7940.
[86] Murayama, K.; Mori, M. Phil. Mag. B 1992, 65, 501 – 514.
[87] Long, A. R. Phil. Mag. B 1989, 59

, 377 – 403.
[88] Shimakawa, K.; Condo, A.; Goto, M.; Long, A.R. J. NonCryst. Sol. 1996, 198-200, 157 – 160.
[89] Shimakawa, K.; Ganjoo, A. Phys. Rev., B 2002, 65, 165213-1 – 165213-5.
[90] Schiff, E.A.; Persans, P.D.; Fritzsche, H.; Akopyan, V. Appl. Phys. Lett. 1981, 38, 92 – 94.
[91] Beyer, W.; Wagner, H.; Mell, H.; Sol. St. Comm. 1981, 39, 375 – 379.
[92] Branz, H. M.; Silver, M. Phys. Rev. B 1990, 42, 7420 – 7428.
[93] Kramer, B.; King, H.; MacKinnon, A. J. NonCryst. Sol. 1983, 59/60, 73 – 76.
[94] Baranovskii, S.D.; Silver, M. Philos. Mag. Lett. 1990, 61, 77 – 81.
[95] Ligachev, V.A. Phys. Sol. St. 1995, 37, 1218 – 1222.
[96] Ligachev, V.A. Phys. Sol. St. 1995, 37, 1879 – 1883.
[97] Ting, C.H.; Seidel, T.E. Mat. Res. Soc. Symp. Proc. 1995, 381, 3 – 47.
[98] Sakurai, T. IEEE Trans. Electron Dev. 1993, 40

, 118 – 124.
[99] Maex, K.; Baklanov, M.R.; Shamiryan, D.; Iacopi, F.; Brongersma, S. H.; Yanovitskaya, Z. S. J. Appl. Phys. 2003, 93, 8793 – 8841.
[100] Ligatchev, V.; Rusli, Chapter 15 in: Handbook of Nanoceramics and Their Based Nanodevices, American Scientific Publishers, Tseng, T.–Y., Nalwa, H. S.; Eds.; vol. 3, pp 337 – 372, Valencia, CA, 2009.
[101] Yu, Y. H.; Lee, S. Ch.; Yang, Ch. S.; Choi, Ch. K.; Jung, W. K. Journal of the Korean Physical Society, 2003, 42, 682 – 685.
[102] Postava, K.; Yamaguchi, T.; Horie, M. Appl. Phys. Lett. 2001, 79, 2231 – 2233.
[103] Yang, S.; Mirau, P.; Sun, J.; Gidley, D. W. Rad. Phys. Chem. 2003, 68, 351 – 356.
[104] Padovani, A.M.; Rhodes, L.; Riester, L.; Lohman, G.; Tsuie, B.; Conner, J.; Allen, S.A.B.; Kohl, P.A., Electrochemical and Solid–State Letters, 2001, 4, F25 – F28.
[105] Chua, C.T.; Sarkar, G.; Hu, X. J. Electrochem. Soc. 1998, 145, 4007 – 4011.
[106] Das, A.; Kokubo, T.; Furukawa, Y. et al. Microelectron. Engineering, 2002, 64, 25 – 33.
[107] Yamada, H. J. Vac. Sci. Technol. 2004, 22A, 82 – 87.
[108] Chang, T. C.; Mor, Y. S.; Liu, P. T. Thin Solid Films, 2001, 398-399, 523 – 526.
[109] Wang, C.Y.; Zheng, J.Z.; Shen, Z.X. et al. Thin Solid Films, 2001, 397, 90 – 94.
[110] http://www.dow.com/silk/silky/feature.ftm.
[111] Baklanov, M.R.; Mogilnikov, K.P. Microelectronic Engineering, 2002, 64, 335–349.
[112] Saito, K.; Ikushima, A. J. Phys. Rev. B, 2000, 62, 8584 – 8587.
[113] Funabiki, F.; Kamiya, T.; Hosono, H. Journ. Ceram. Soc. Japan, 2012, 120, 447 – 457.
[114] Chan, M.H.; So, S.K.; Cheah, K. W. J. Appl. Phys. 1996, 79

, 3273 – 3275.
[115] Kovalev, D.; Polisski, G.; Ben–Chorin, M.; Diener, J.; Koch, F. J. Appl. Phys. 1996, 80, 5978 – 5983.
[116] Meyerson, B. S.; Harame, D. L.; Stork, J.; Crabbe, E.; Comfort, J.; Patton, G. Int. J. High Speed Electron. Syst. 1994, 5, 473 – 491.
[117] Bean, J. C. Proc. IEEE, 1992, 80, 571 – 587.
[118] Yellen, S. L.; Shepard, A. H.; Dalby, R. J.; Baumann, J. A.; Serreze, H. B.; Guido, T. S.; Soltz, R.; Bystrom, K. J.; Harding, C. M.; Waters, R. G. J. Quantum Electron. 1993, 29, 2058 – 2067.
[119] Ismail, K.; LeGoues, F. K.; Saenger, K. L.; Arafa, M.; Chu, J. O.; Mooney, P. M.; Meyerson, B. S. Phys. Rev. Lett. 1994, 73, 3447 – 3450.
[120] Fitzgerald, E.; Xie, Y.–H.; Green, M. L.; Brasen, D.; Korton, A. R.; Michel, J.; Mie, Y.–J.; Weir, B. E. Appl. Phys. Lett. 1991, 59, 811 – 813.
[121] Mii, Y. J.; Xie, Y. H.; Fitzgerald, E. A.; Monroe, D.; Theil, F. A.; Weir, B. E. Appl. Phys. Lett. 1991, 59, 1611 – 1613.
[122] Schaffler, F.; Tobben, D.; Herzog, H. J.; Abstreiter, G.; Hollander, B. Semicond. Sci. Technol. 1992, 7, 260 – 266.
[123] Ringel, S. A.; Grilot, P.N. in: Semiconductors and Semimetals, Germanium Silicon: Physics and Materials, v. 56, Hull, R.; Bean, J.C.; Ed.; Academic Press: San Diego, CA, 1999, p.p. 293 – 346.
[124] Campbell, J.C. In: Semiconductors and Semimetal, Optoelectronics in Silicon and Germanium Silicon, v. 56, Hull, R.; Bean, J.C.; Ed.; Academic Press: San Diego, CA, 1999, p.p. 347 – 386.
[125] Ligatchev, V. In: Diamond and Related Materials Research, / Shôta Shimizu, Ed.; Nova Science Publishers: Hauppauge, N.Y. USA, 2008, p.p. 21 – 78.
[126] Van Der Merwe, J. H. J. Appl. Phys., 1963, 34, 117 – 122.
[127] Van Der Merwe, J. H. J. Appl. Phys., 1963, 34, 123 – 127.
[128] Tersoff, J.; LeGoues, F.K. Phys. Rev. Lett. 1994, 72, 3570 – 3573.
[129] Lukovsky, G.; Wu, Y.; Niimi, H.; Misra, V.; Phillips, J.C. J. Vac. Sci. Technol. B 1999, 17, 1806 – 1812.
[130] Matthews, J. W.; Blakeslee, A. E. J. Cryst. Growth 1974, 27, 118 – 125.
[131] People, R.; Bean, J. C. Appl. Phys. Lett. 1985, 47, 322 – 324.
[132] People, R.; Bean, J. C. Appl. Phys. Lett. 1986, 49, 229 (the single page).
[133] Sherwin, M.E.; Drummond, T.J. J.Appl. Phys. 1991, 69, 8423 – 8425.
[134] Ligatchev, V.; Wong, T.K.S.; Yoon, S.F. J. Appl. Phys. 2004, 95, 7681 – 7689.
[135] Ligatchev, V.; Wong, T.K.S. J. Electrochem. Soc. 2005, 152, H58 – H52.
[136] Ligatchev, V.; Wong, T.K.S. J. Electrochem. Soc. 2005, 152, H63 – H67.
[137] Ligatchev, V. J. Phys. D: Appl. Phys. 2011, 44, 174013 (18 pp).
[138] Wu, P.; Ligatchev, V; Yu, Zh. G.; Zheng, J.; Sullivan, M.B.; Zeng, Y. Phys. Rev. B 2009, 79, 235122 (4 pp).
[139] Kosarev, A.; Torres, A.; Hernandez, Y.; Ambrosio, R.; Zuniga, C.; Felter, T. E.; Asomoza, R.; Kudriavtsev, Y.; Silva–Gonzalez, R.; Gomez-Barojas, E.; A.Ilinski, A.; Abramov, A. S. J. Mat. Res. 2006, 21, 88 – 104.
[140] Le Bolloc’h, D.; Robertson, J. L.; Reichert, H.; Moss, S. C.; Crow, M. L. Phys Rev B 2001, 63, 035204-1 – 035204-7.
[141] Rosenbaum, J. F. Bulk Acoustic Wave Theory and Devices, Artech House, 1998, Boston, p.p. 1 – 413.
[142] Baroni, St.; de Gironcoli, St.; Dal Corso, A.; Giannozzi, P. Rev. Mod. Phys. 2001, 73, 515 – 562.
[143] Lastras–Martínez, L.F.; Cardona, M. Superficies y Vacío 2005, 18, 7 – 12.
[144] Fröhlich, H.; Adv. Phys. 1954, 3, 325 – 361.
[145] Devreese, J. T.; Alexandrov, A. S. Rep. Prog. Phys. 2009, 72, 066501 (52 pages).
[146] Stoica, T.; Vescan, L. J. Appl. Phys. 2003, 93, 4461 – 4467.
[147] Wortis, M. In Chemistry and Physics of Solid Surfaces VII. Vanselow, R.; Howe, R.F.; Ed.; Springer–Verlag, Heidelberg, 1988, p.p. 1 – 367.
[148] Dumin, D. J. J. Vac. Sci. Technol. 1971, 8, 235 – 241.
[149] Snyder, C.W.; Orr, B.G. Phys. Rev. Lett. 1993, 70, 1030 (the single page).
[150] Buyanova, I. A.; Chen, W. M.; Pozina G. et al. Appl. Phys. Lett. 1997, 71

, 3676 – 3678.
[151] LeGoues, F.K.; Copel, L.; Tromp, R.M. Phys. Rev. Lett. 1989, 63, 1826 – 1829.
[152] Kim, H.; Glass, G.; Park S.Y. et al. Appl. Phys. Lett. 1996, 69, 3869 – 3871.
[153] Kim, H.; Glass, G.; Desjardins, P.; Greene, J.E. J. Appl. Phys. 2001, 89, 194–205.
[154] Lannon, J.M.; Gold, J.S.; Stinespring, C.D. Appl. Phys. Lett. 1998, 73, 226 – 228.
[155] Yu, B. D.; Miamoto, Y.; Sugino, O. Appl. Phys. Lett. 2000, 76, 976 – 978.
[156] Ligatchev, Valeri. Nano– and Micro–Crystalline Diamond Films and Powders, Nova Science Publishers, Hauppauge, NY, USA, 2009, p.p. 1 – 92.
[157] Ravi, K.V.; Koch, C.A.; Hu, H.S.; Joshi, A. J. Mat. Res., 1990, 5, 2356 – 2366.
[158] Nimmagadda, R.R.; Joshi, A.; Hsu, W.L. J. Mat. Res., 1990, 5, 2445 – 2450.
[159] Chen, L.C.; Kichambare, P.D.; Chen, K.H. et al. J. Appl. Phys. 2001, 89

, 753 – 759.
[160] Marinelli, M.; Milani, E.; Paoletti, A. et al. J. Appl. Phys., 2001, 89, 1430 – 1435.
[161] Yang, W.B.; Lu, F.X.; Chao, Z.X. J. Appl. Phys. 2002, 91

, 10068

10073.
[162] Schroder, R.E.; Nemanich, R.J.; Glass, J.T. Phys. Rev. B, 1990, 41, 3738 – 3745.
[163] Robertson, J. Adv. Phys. 1986, 35

, 317 – 389.
[164] Robertson, J. Progr. Sol. St. Chem. 1991, 21,

199 – 333.
[165] McCulloch, G.; McKenzie, D.R.; Goringe, G.M. Phys. Rev. B 2000, 61, 2349 – 2355.
[166] Marinelli, M. Milani, E.; Paoletti, A. et al., Appl. Phys. Lett. 1999, 75, 3216 – 3218.
[167] Rossi, M. C.; Salvatori, S.; Galluzzi, F. Diam. Relat. Mater. 1997, 6, 712 – 716.
[168] Rossi, M. C.; Salvatori, S.; Galluzzi, F. J. Vac. Sci. Technol. B, 1998, 16

, 1725 – 1731.
[169] Robertson, J. Material Science and Engineering 2002, 37

, 129 – 281.
[170] Rusli; Robertson, J.; Amaratunga, G. J. Appl. Phys. 1996, 80

, 2998 – 3003.
[171] Tamor, M.A.; Vassel, V.C. J. Appl. Phys. 1994, 76

, 3823 – 3830.
[172] Cody, G. D.; Tiedje, B.; Abeles, B.; Brooks, B.; Goldstein, Y. Phys. Rev. Lett. 1981, 47

, 1480 – 1483.
[173] Cody, G.D. In Semiconductors and semimetals 21B, Pankove, J.I.; Ed.; 1984, Academic Press, New–York, p.p. 11 – 82.
[174] Zanatta, A.R.; Chambouleyron, I. Phys. Rev. B., 1996, 53

, 3833 – 3836.
[175] Zanatta, A.R.; Mulato, M.; Chambouleyron, I. J. Appl. Phys., 1998, 84, 5184 – 5190.
[176] Nesladek, M.; Meykens, K.; Stals, L.M.; Vanecek, M.; Rosa, J. Phys. Rev. B 1996, 54

, 5552 – 5561.
[177] Kulda, J.; Kainzmaier, H.; Strauch, D.; Dorner, B.; Lorenzen, M.; Kirsch, M. Phys Rev B 2002, 66, 2002, 24102 (4 pages).
[178] Rohrer, E.; Graeff, C. F. O.; Janssen, R.; Nebel, C. E.; Stutzmann, M. Phys Rev B 1996, 54, 7874 – 7880.
[179] Born, M.; Huang, K. Dynamic Theory of Crystal Lattices, Oxford University Press, Oxford, UK, 1968, p.p. 1 – 420.
[180] Skettrup, T. Phys. Rev. B, 1978, 18, 2622 – 2631.
[181] Mott, N.F.; Davis, E.A. Electron Processes in Non–Crystalline Materials, Clarendon Press, Oxford, 1979, p.p. 1 – 368.
[182] Anderson, P. W. Phys. Rev. 1959, 115, 2 – 13.
[183] Hubbard, J., Proc. R. Soc. London, Ser. A 1963, 276, 238 – 257.
[184] Phillips, J.C. Rev. Mod. Phys. 1970, 42, 317 – 356.
[185] Thorpe, M.F.; Weaire, D. Phys. Rev. Lett. 1971, 27, 1581 – 1584.
[186] Allen, P. B.; Heine, V. J. Phys. C 1976, 9, 2305 – 2312.
[187] Cardona, M. Phys. Stat. Sol. (a) 2001, 188, 1209 – 1232.
[188] Olguin, D.; Cardona, M.; Cantarero, A. Sol. St. Comm. 2002, 122, 575 – 589.
[189] Giustino, F.; Louie, S. G.; Cohen, M. L. Phys. Rev. Lett. 2010, 105, 265501 (4 pp).
[190] Fan, H. Y. Phys. Rev. 1951

, 82, 900 – 905.
[191] Paul, W. Proc. IX IVC–V ICSS, 1983 Madrid, 335 – 343.
[192] Tolman, R.C. Principles of Statistical Mechanics. Dover, New-York, 1979, p.p. 1 – 660.[193] Tables of the Physical Values. Kikoin, I.K.; Ed.; ‘Atomizdat’, Moscow, 1976, p.p. 1 – 1008 (in Russian).
[194] Logothetidis, S.; Petalas, J.; Polatoglou, H.M.; Fuchs, D. Phys. Rev. B 1992, 46

, 4483 – 4494.
[195] Allen, P.B.; Cardona, M. Phys. Rev. B, 1985, 23, 1495 – 1505.
[196] Zollner, S.; Cardona, M.; Gopalan, S. Phys. Rev. B 1992, 45, 3376 – 3385.
[197] Arena, C.; Kleinsorge, B.; Robertson, J.; Milne, W.I.; and, M.E. J. Appl. Phys. 1999, 85, 1609 – 1615.
[198] Robertson, J. Phys. Stat. Sol. B

2001, 186

, 177 – 185.
[199] Urbach, F. Phys. Rev. 1953, 92, 1324 (the single page).
[200] Bouchaud, J.P. J. De Physique I 1992, 2, 1705 – 1713.
[201] Glauber, R.J. Phys. Rev. 1963, 131, 2766 – 2788.
[202] Irribarren, A.; Castro-Rodríguez, R.; Sosa, V.; Caballero-Briones, F.; Peña, J. L. Superficies y Vacio 1999, 8, 55 – 58.
[203] Chin, A. H.; Bakker, J. M.; Kono, J. Phys. Rev. Lett. 2000, 85, 3293 – 3296.
[204] Ghimire, Shambhu; DiChiara, Anthony D.; Sistrunk, Emily; Szafruga, Urszula B.; Agostini, Pierre; DiMauro, Louis F.; Reis, David A. Phys. Rev. Lett. 2011, 107, 167407 (5 pages).
[205] Kazanskii, A.G.; Yarkin, D. G. Semiconductors, 1994, 28, 519 – 521.
[206] Ramdas, A.K.; Rodriguez, S.; Tsoi, S.; Haller, E.E. Sol. St. Comm. 2005, 133, 709 – 714.
[207] O’Donnel, K.P.; Chen, X. Appl. Phys. Lett. 1991, 58, 2924 – 2926.[208] Handbook of mathematical functions: with formulas, graphs, and mathematical tables / Abramowitz, M.; Stegun, I.A. Ed.: Dover, New-York, N.Y.: 1965, p.p. 1 – 1046.
[209] Hinckley, J.M.; Singh, J. J. Appl. Phys. 1994, 76, 4192 – 4200.
[210] Ligatchev, V.; Ong, K. P.; Wu, P. Diam. Relat. Mater. 2007, 16, 784 – 789.
[211] Glansdorff, P.; Prigogine, I. Thermodynamics: Theory of Structure, Stability and Fluctuations. Addison–Wesley, 1971, London, 1971, p.p. 1 – 245.
[212] Glansdorff, P.; Prigogine, I. In Encyclopedia of Physics Lerner, R.G.; Trigg, G.L. Ed.; Addison–Wesley, 1981, London, p.p. 1029 – 1035.
[213] Haken, H. Synergetics, An Introuduction Springer Ser. Synergetics, 1980, 1, 3rd ed., Springer, Heidelberg, 1980, p.p. 1 – 371.
[214] Haken, H. Advanced Synergetics. Springer, Heidelberg, 1983, p.p. 1 – 356.
[215] Ligachov, V.A., Proc. 35. Int. Colloquium TH Ilmenau, Ilmenau, DDR, 1990, 4, 56 –59.
[216] Ligachov, V.A., Gordeev, V.N., Filikov, V.A. Proc. 7th Int. Conf. Thin Film Phys. and Appl. Shanghai, China, April 14–17, 1991, Proc. of SPIE, 1519, 214 – 219.
[217] Smith, Z.E.; Wagner, S. Phys. Rev. Lett. 1987, 59, 688 – 691.
[218] Bar–Yam, Y.; Adler, D.; Joannopoulos, J.D. Phys. Rev. Lett. 1986, 57, 467 – 470.
[219] Street, R.A. Phys. Rev. Lett. 1982, 49, 1187 – 1190.
[220] Street, R.A. Winer, K. Phys. Rev. B 1989, 40, 6236 – 6249.
[221] Street, R.A. Phys. Rev. B 1991, 44, 10610 – 10616.
[222] Ligatchev, V. Physica B: Physics of Condensed Matter, 2003, 337, 333 – 345.
[223] Sherman, S.; Wagner, S.; Gottegcho, R.A. Appl. Phys. Lett. 1996, 69, 3242 – 3244.
[224] Cohen, M.H.; Soukoulis, C.M.; Economou, E.N. ‘Recent progress in theory of amorphous semiconductors’, In: Physics of Disordered Materials / Adler, D.; Fritzsche, H.; Ovshinsky, S.R. Ed.: Plenum Press, New York, 1986, 850 p.; p.p. 303 – 326.
[225] Vanecek, M.; Kocka, J.; Stuchlik, J. et al. Sol. St. Comm., 1981, 39, 1199 – 1202.
[226] Ligatchev, V. Physica B: Physics of Condensed Matter, 2003, 337, 346 – 356.
[227] Ligatchev, Valeri, In Focus on Condensed Matter Physics Research; Chang, J. V. Ed.; Nova Science Publishers: Hauppauge, NY, 2005; p.p. 1 – 81.
[228] Abeles, B.; Cody, G.D.; Goldsein, Y.; Tiedji, T.; Wronsky, C.R. Thin Solid Films, 1982, 90, 441 – 449.
[229] Cody, G. D.; Abeles, B.; Wronski, C. R.; Brooks, B. J. NonCryst. Solids 1980, 35/36

, 463 – 468.
[230] Okamoto, H.; Hattori, K.; Hamakawa, Y. J. NonCryst. Sol. 1996, 198 – 200, 124 – 127.
[231] Yamaguchi, M.; Morigaki, K. Phil. Mag. B 1999, 79, 387 – 405.
[232] Stuttzmann, M. Philos. Mag. B 1987, 56, 63 – 78.
[233] Stuttzmann, M. Phil. Mag. B, 1989, 60, 531 – 554.
[234] Pierz, K.; Fuhs, W.; Mell, H. J. NonCryst. Sol., 1989, 114, 651 – 653.
[235] Drabold, D.A.; Li, Jun Mat. Res. Soc. Symp. Proc.

2002, 715, A.14.1.1 – A.14.1.9.
[236] Holstein, T. Ann. Phys. (N.Y.) 1959, 8

, 343 – 389.
[237] Emin, D. Physics Today 1982, 35, 35 40.
[238] Alexandrov, A.S. Phys. Rev. B 1992, 46, 14932 - 14935.
[239] Lim, Ji–Song; Yang, Xiaodong; Nishida, Toshikazu; Thompson, Scott E. Appl. Phys. Lett. 2006, 89, 073509 (3 pages).
[240] Ragan, R.; Min, K. S.; Atwater, H.A. Mat. Sci. Engineer. B, 2001, 87, 204 – 213.
[241] Ligatchev, V. Physica B: Physics of Condensed Matter, 2004, 348, 420 – 435.
[242] Kovarski, V.A. Sov. Phys. Solid State 1962, 4, 1200 – 1204.
[243] Mukamel, S.; Abe, S.; Yan, Y. J.; Islampour, R. J. Phys. Chem.1985, 89, 201 – 204.
[244] Egorov, S.A.; Rabani, E.; Berne, B.J. J. Chem. Phys. 1988, 108, 1407 – 1422.
[245] Adler, D. and Yoffa, E. J. Phys. Rev. Lett. 1976, 36, 1197 – 1200.
[246] Premachamdran, V.; Narasimhan, K.L.; Bapat, D.R. Phys. Rev. B 1984, 29, 7073 – 7075.
[247] Golikova, O.A.; Domashevskaya, E.P.; Kazanin, M.M.; Kudoyarova, V. Kh.; Mezdrogina, M.M.; Sorokina, K.L.; Terekhov, V.A.; Trostyanskii, S.N. Sov. Phys. Semiconuctors 1989, 23, 281 – 284.
[248] Ligachev, V.A.; Filikov, V.A. Sov. Phys. Semiconductors 1992, 26, 865 – 868.
[249] Danchenkov, A.A.; Ligachev, V.A.; Popov, A.I. Sov. Phys. Semiconductors, 1993, 27, 683 – 686.
[250] Ziman, J.M. Models of Disorder. The Theoretical Physics of Homogeneously Disordered Systems, Cambridge University Press: Cambridge, 1979, p.p. 1 – 346.
[251] Shante, V.K.S.; Kirkpatrick, S. Adv. Phys. 1971, 20, 325 – 357.
[252] Harter, T. Phys Rev E 2005, 72, 026120 (8 pages).
[253] Balberg, I.; Binenbaum, N.; Wagner, N. Phys. Rev. Lett. 1984, 52, 1465 – 1468.
[254] Yi, Y.–B.; Wang, C.-W.; Sastry, A.M. Journal of the Electrochemical Society, 2004, 151

, A1292 – A1300.
[255] Fröhlich, H. Proc. Roy. Soc. 1937, A160, 230 – 241.
[256] Huang, K. Proc. Roy. Soc. 1951, A208, 352 – 365.
[257] Mott, N.F. Proc. Roy. Soc. A 1938, 167, 384 – 391.
[258] Gurney, R.W.; Mott, N.F. Trans. Farad. Soc. 1939, 35, 69 – 73.
[259] Davidov, A.S. Zhurn. Experiment. Teoretich. Fiz. 1953, 24, 397 – 412 (in Russian).
[260] Shreve, A.P.; Haroz, E. H.; Bachilo, S. M.; Weisman, R.B. Tretiak, S. Kilina, S.; Doorn, S. K. Phys. Rev. Lett. 2007, 98, 037405, 4 pages.
[261] Emin, D. Phys. Rev. Lett, 1974, 32, 303 – 307.
[262] Yelon, A.; Movaghar, B. Phys. Rev. Lett. 1990, 65, 618 – 620.
[263] Gan, Bo; Chew, Kerlit; Zhang, Qing et al. Phys. Stat. Sol. (a) 2000, 181

, 17 – 22.
[264] Gan, Bo; Ahn, J.; Rusli et al. J. Appl. Phys., 2001, 89

, 5747 – 5753.
[265] Ligatchev, V.; Gan, B. Diam. Relat. Mater. 2006, 15, 410 – 416.
[266] Ferreira, N.G.; Abramof, E.; Leite, N.F.; Corat, E.J.; Trava–Airoldi, V.J. J. Appl. Phys. 2002, 91, 2466 – 2472.
[267] Tu, K.N.; Gusak, A.M.; Sobchenko, I. Phys. Rev. B 2003, 67, 245408-1 – 245408-5.
[268] Suleman, H.; Filikov, V.A.; Vasil’eva, N.D.; Ligachev, V.A. J. Techn. Physics, 1994, 39, 765 – 768.
[269] Svirkova, N.N.; Filikov V.A.; Ligachev, V.A. Semiconductors, 1994, 28, 1164 – 1169.
[270] Ligachev, V.A.; Svirkova, N.N.; Filikov, V.A.; Vasil’eva, N.D. Semiconductors, 1996, 30, 834 – 838.
[271] Lewis, B.; Campbell, D.S. J. Vac. Sci. Technol., 1967, 4, 209 – 218.
[272] Lewis, B., Anderson, J.C. Nucleation and Growth of Thin Films, Academic Press, New-York, 1978, p.p.1 – 504.
[273] Maeda, K.; Umezu, I.; Ishizuka, H. Phys. Rev. B 1997, 55, 4323 – 4331.
[274] Bhusari, D.M.; Kumbhar, A.S.; Kshirsagar, S.T. Phys. Rev. B., 1993, 47, 6460 – 6464.
[275] Spear, W., 1973, In Proc. 5th Int. Conf. Phys. Amorph. Liq. Semicond. Stuke, J.; Brenig, W.; Ed.; Taylor and Francis, London, 1974, 1 – 16.
[276] Anderson, D.A.; Paul, W. Philos. Mag. B 1981, 44, 187 – 213.
[277] Ligatchev, V.; Wong, T.K.S.; Liu, Bo; Rusli J. Appl. Phys. 2002, 92, 4605 – 4611.
[278] Ligatchev, V.; Wong, T.K.S.; Goh, T.K.; Rusli, Yu S. Mat. Res. Symp. Proc., 2003, 766, E8.5.1 – E8.5.6.
[279] Ligatchev, V.; Goh, T. K.; Yu, S.; Rusli. J. Electrochem. Soc. 2005, 152, F83 – F89.
[280] Ferrary, A. C.; Libassi, A.; Tanner, B.K.; et al. Phys. Rev. B, 2000, 62, 11089 – 11103.
[281] Martin, S. J.; Godschalx, J. P.; Mills, M. E.; Shaffer II, E. O.; Townsend, P. H. Adv. Mater. 2000, 12, 1769 – 1778.
[282] Furusawa, T.; Ryuzaki, D.; Yoneyama, R.; Homma, Y.; Hinode, K. J. Electrochem. Soc., 2001, 148, F175 – F179.
[283] Yu, S.; Wong, T.K.S.; Hu, X.; Pita, K. Chem. Phys. Lett. 2003, 380, 111 – 116.
[284] Braun, R.D. Introduction to Instrumental Analysis McGraw–Hill, 1987, p.p. 1 – 1006.
[285] Park, N.-M., Choi, S.–K.; Park, S.-J. Appl. Phys. Lett. 2002, 81, 1092 – 1094.
[286] Zeng, Y.; Russell, S.W.; McKerrow, A.J.; Chen, L.; Alford, T. L. Journ. Vac. Sci. Techn B, 2000, 18, 221 – 230.
[287] Den Böer, W. Journal de Physique (Paris), 1981, 42, C4-451 – C4-454.
[288] Weisfield, R. L. J. Appl. Phys., 1983, 54, 6401 – 6416.
[289] Boccara, C.; Fournier D.; Badoz, J. Appl. Phys. Lett. 1979, 36, 130 – 132.
[290] Jackson, W.B.; Amer, N.M., Boccara, A.C., Fournier, D. Applied Optics 1981, 20, 1333 – 1344.
[291] Grimmeiss, H. G.; Ledebo, L. A. J. Appl. Phys. 1975, 46, 2155 – 2162.
[292] Lang, D.V. J. Appl. Phys. 1974, 45, 3023 – 3032.
[293] Mort, J.; Machonkin, M.A.; Okumura, K. Diam. Relat. Mater. 1992, 1, 673 – 676.
[294] Werner, M.; Dorsh, O.; Hinze, A.; Obermeier, E.; Harper, R.E.; Johnston, C.; Chalker, P.R.; Buckley–Golder, I.M. Diam. Relat. Mater. 1993, 2, 825 – 828.
[295] Ligachev, V.A.; Filikov V.A. Sov. Phys. Semicond. 1991, 25, 78 – 81.
[296] Zeisel, R.; Nebel, C. E.; Stutzmann, M. J. Appl. Phys. 1998, 84, 6105 – 6108.
[297] Stoneham, A. M. Mat. Sci. Eng. 1992, 11

, 211 – 218.
[298] Smith, H.E.; Newton, M.E.; Kanda, H. Phys. Rev. B 2004, 69, 045203-1 – 045203-9.
[299] Nebel, C. E.; Sauerer, C.; Ertl F. et al. Appl. Phys. Lett., 2001, 79, 4541 – 4543.
[300] Houssa, M.; Autran, J. L.; Stesmans, A.; Heyns, M. M. Appl. Phys. Lett. 2002, 81, 709 – 711.
[301] Ligatchev, V.; Wong, T.K.S. Electrochem. Sol. St. Lett., 2004, 7, F89 – F92.
[302] Masuda, A.; Itoh, K.–I.; Matsuda, K.; Yonezawa, Y.; Kumeda, M.; Shimizu, T. J. Appl. Phys. 1997, 81, 6729 – 6737.
[303] Okushi, H. Philos. Mag. B 1985, 52, 33 – 57.
[304] Hattori, K.; Okamoto, H.; Hamakawa, Y. Philos. Mag. B

1988,

57, 13 – 29.
[305] Shimizu, T.; Kidoh, H.; Morimoto, A.; Kumeda, M. Jap. J. Appl. Phys. 1989, 28, 586 – 592.
[306] Ligachev, V.A.; Filikov, V.A. Sov. Phys. Sol. St. 1991, 33, 1857 – 1862.
[307] Petrich, M. A.; Gleason, K. K.; Reimer, J. A. Phys. Rev. B 1987, 36, 9722 – 9731.
[308] Chew, K.; Rusli; Yoon, S. F.; Ahn, J.; Zhang, Q.; Ligatchev, V. J. Appl. Phys. 2002, 91, 4319 – 4325.
[309] Hu, Z.G.; Hess, P. Appl. Phys. Lett. 2006, 89, 081906-1 – 081906-3.
[310] Salvatori, S.; Brugnoli, E.; Rossi, M.C.; Pinzari, F. Diam. Relat. Mater. 2001, 10, 852 – 857.[311] Optical Properties of Diamond: A Data Handbook; Zaitsev, A.M.; Springer: Berlin–Heidelberg, 2001, p.p. 1 – 125.
[312] Heavens, O. S. Optical Properties of Thin Solid Films

, Dover Publications, 1991, New–York, p.p. 1 – 261.
[313] Schroder, D.K. Semiconductor Material and Device Characterization, John Wiley & Sons, 1990, New–York, p.p. 1 – 411.
[314] Chiu, Kuan-Cheng; Wang, Jyh–Shyang; Lin, Chung-You J. Appl. Phys. 1996, 79, 1764 – 1787.
[315] Edwards, D.F.; Ochoa, E. J. Opt. Soc. Amer. 1981, 71, 607 – 608.
[316] Nesládek, M.; Vanecek, M.; Rosa, J.; Quaeyhaegens C.; Stals, L. M. Diamond Relat. Mater. 1995, 4

, 697 – 701.
[317] Obraztsov, A.N.; Pavlovsky, I.Yu.; Okushi, H.; Watanabe, H. Phys. Sol. St. 1997, 39, 1594 – 1598.
[318] Wang, Z.Q.; Stroud, D.; Dregia, S.A. Phys Rev B, 1994, 50, 12073 – 12077.
[319] Chakrabarti, K.; Chakrabarti, R.; Chattopadhyay, K.K.; Chaudhuri, S.; Pal, A.K. Diam. Relat. Mater. 1998, 7, 845 – 852.
[320] Jarrendahl, K.; Davis R.F. In Semiconductors and Semimetals, Academic Press, New–York, 1998, 52, p.p. 1 – 20.
[321] Chew, K.; Rusli; Yoon, S.F.; Ahn, J.; Ligatchev, V.A. J. Appl. Phys. 2002, 92, 2937 – 2941.
[322] Suleman, Kh.; Ligachev, V.A.; Filikov, V. A. Semiconductors, 1993, 27, 186 – 188.
[323] Ligachev, V.A. Phys. Sol. St. 1993, 35, 1159 – 1164.
[324] Ligachev, V. A.; Gordeev, V.N.; Filikov, V.A.; Suleman, H. Sov. Phys. Semiconductors 1991, 25, 927 – 930.
[325] Yonezawa, F.; Ishida, Y.; Ogawa, S.; Tsujino, K. J. NonCryst. Sol. 1995, 5960, 69 – 73.
[326] Schumm, G. Appl. Phys. Lett., 1995, 66, 2706 – 2708.
[327] Goldberg, Yu.; Levinstein, M.E.; Rumyantsev, S.L. In Properties of Advanced Semiconductor Materials GaN, AlN, SiC, BN, Si Ge. Levinstein, M.E.; Rumyantsev, S.L.; Shur, M.S.; Ed.; John Wiley and Sons, New–York, 2001, p.p.93 – 148.
[328] Delahov, A.E.; Griffith, R.W. J. Appl. Phys. 1981, 52, 6337 – 6346.
[329] Williamson, D.L. In Amorphous Silicon Technology, Mat. Res. Soc. Symp. Proc. 377, Hack, M.; Shiff, E.A.; Madan, A.; Powel, M.; Matsuda, A. Ed.: MRS, Pittsburg, 1995, p.p. 5 – 47.
[330] Tsu, D.V.; Chao, B.S.; Ovshinsky, S.R. Appl. Phys. Lett. 1997, 71, 1317 – 1319.
[331] Knights, J.C. In Physics of Hydrogenated Amorphous Silicon I Joannopoulos, J.D; Lucovsky, G. Ed.; 1984, Springer–Verlag, Heidelberg, p.p. 5 – 47.
[332] Nuruddin, A.; Doyle, J.R.; Abelson, J.R. J. Appl. Phys., 1994, 76, 3123 – 3129.
[333] Kessel, W.M.N.; Van de Sanden, M.C.M.; Shramm, D.C. J. Vac. Sci. Technol. A 2000, 18, 2153 – 2163.
[334] Shirai, H.; Drvillon, B. Jpn. J. Appl. Phys. 1994, 33, L1577 – L1580.
[335] Perrin, J.; Shiratani, M.; Kae–Nane, P. et al. J. Vac. Sci. Technol. A 1998, 16, 278 – 289.
[336] Maley, N.; Lannin, J.S. Phys. Rev. B, 1987, 36, 1146 – 1152.
[337] Mahan, A.H.; Xu, Y.; Williamson D.L. et al. J. Appl. Phys, 2001, 90, 5038 – 5047.
[338] Ekimov, E. A.; Sidorov, V.A.; Bauer, E.D.; Melonik, N. N.; Curro, N. J.; Thompson, J. D.; Stishov, S. M. Nature (London) 2004, 428

, 542 – 545.
[339] Bustarret, E.; Kacmarcik, J.; Marcenat, C.; Gheeraert, E.; Cytermann, C.; Marcus, J.; Klein, T. Phys. Rev. Lett. 2004, 93

, 237005-1 – 237005-4.
[340] Takano, Y.; Nagao, M.; Sakaguchi, I.; Tachiki, M.; Hatano, T.; Kobayashi, K.; Umezawa, H.; Kawarada, H. Appl. Phys. Lett. 2004, 85

, 2851 – 2853.
[341] Takano, Y., Nagao, M., Takenouchi, T., Umezawa, H., Sakaguchi, I., Tachiki, M. & Kawarada, H. Diam. Relat. Mater. 2005, 14, 1936 – 1938.
[342] Umezawa, H.; Takenouchi, T.; Takano. Y. et al. New Diamond and Frontier Carbon Technology 2007, 17, 1 – 9.
[343] Klein, T; Achatz, P.; Kacmarcik, J.; Marcenat, C.; Gustafsson, F.; Marcus, J.; Bustarret, E.; Pernot, J.; Omnes, F.; Sernelius, Bo; Persson, C.; Ferreira da Silva, A.; Cytermann, C. Phys. Rev. B 2007, 75, 165313-1 – 165313-7.
[344] Shirakawa, T.; Horiuchi, S.; Ohta, Y.; Fukuyama, H. J. Phys. Soc. Jap. 2007, 76, 014711-1 – 014711-20.
[345] Ohta, Y. New Diamond and Frontier Carbon Technology 2007, 17, 33 – 44.
[346] Mukuda, H.; Tsuchida, T.; Harada, A. et al. Phys. Rev. B 2007, 75, 033301-1 – 033301-4.
[347] Xiang, H.J.; Li, Zhenyu; Yang, Jinlong; Hou, J. G.; Zhu, Qingshi. Phys. Rev. B 2004, 70, 212504-1 – 212504-4.
[348] Bustarret, E.; Achatz, P.; Sacépé, B.; Chapelier, C.; Marcenat, C.; Ortéga, L.; Klein. T. Phil. Trans. R. Soc. A 2008, 366, 267 – 279.
[349] Kato, Yu.; Matsui, F.; Shimizu, T.; Daimon, H.; Matsushita, T.; Guo, F. Zh.; Tsuno, T. Appl. Phys. Lett. 2007, 91, 251914-1 – 251914-3.
[350] Hoesch, M.; Fukuda, T.; Mizuki, J.; Takenouchi, T.; Kawarada, H.; Sutter, J.P.; Tsutsui, S.; Baron, A.Q.R.; Nagao, M.; Takano, Y. Phys. Rev. B 2007, 75, 140508-1 – 140508-4.
[351] Cardona, M.; Christensen, N.E. Phys. Rev. B, 1987, 35, 6182 – 6194.
[352] Wojewoda, T.; Achatz, P.; Ortega, L.; Omnès, F.; Marcenat, Ch.; Bourgeois, E.; Blasé, X.; Jomard, F.; Bustarret, E. Diam. Relat. Mater. 2008, 17, 1302 – 1306.
[353] Alegre, M. P.; Araújo, D.; Fiori, A.; Pinero, J. C.; Lloret, F.; Villar, M. P.; Achatz, P.; Chicot, G.; Bustarret, E.; Jomard, F. Appl. Phys. Lett. 2014, 105, 173103-1–173103-5.
[354] Bardeen, J.; Cooper, L.N.; Schrieffer, J.R. Phys. Rev. 1957, 108, 1175 – 1204.
[355] Blank, V.D.; Kulnitskiy B. A.; Perezhogin I. A.; Terentiev S. A.; Nosukhin S. A.; Kuznetsov M. S. Materials Research Express 2014, 1, 035905-1 – 035905-13.
[356] McMillan, W. L. Phys. Rev. 1968, 167, 331 – 334.
[357] Mareš, J. J.; Hubík, P.; Krištofik, J.; Kindl, D.; Nesládek, M. Chem. Vap. Deposition 2008, 14, 161 – 172.
[358] Prins, J.F. Phys. Rev. B, 1989, 39, 3764 – 3770.
[359] Thomas, L.H. Proc. Camb. Phil. Soc. 1927, 23, 542 – 548.
[360] Fermi, E. Rend. Accad. Naz. Lincei. 1927, 6, 602 – 607.
[361] Willatzen, M.; Cardona, M., Christensen, N.E. Phys. Rev. B, 1994, 50, 18054 – 18059.
[362] Ligatchev, V. Book of Abstracts of 216th ECS Meeting in Vienna, Austria, October 4 – 9, 2009, Abstract #2843.
[363] Blum, K. Density Matrix. Theory and Applications, Springer, 2012, Heidelberg, p.p. 1 – 346.
[364] Hu, X.; Nori, F. Phys. Rev. Lett. 1996, 76, 2294 – 2297.
[365] Klamkin, M. S. The American Mathematical Monthly, 1971, 78, 280 – 283.
[366] Klamkin, M. S. The American Mathematical Monthly, 1976, 83, 478 – 481.
[367] Korn, G.A.; Korn, T. Mathematical handbook for scientist and engineers.
McGraw–Hill, 1968, New–York, p.p. 1 – 1130.[368] Table of Integrals, Series and Products. Gradshtein, I.S.; Ryzhik, I.M. Jeffrey, Alan, Ed.; Academic Press, 1994, New–York, p.p.1 – 1204.
[369] Wu, Sean; Lin, Zhi-Xun; Lee, Maw-Shung; Ro, Ruyen; J. Appl. Phys. 2007, 102, 084908 (7 pp).
[370] Auld, B. A. Acoustic Fields and Waves in Solids John Wiley & Sons, 1973, New–York, p.p. 1 – 837.
[371] Peeters, F. M.; Devreese, J. T. Phys. Rev. B 1985, 31, 4890 – 4899.
[372] Oberhettinger, F. Tables of Fourier Transforms and Fourier Transforms of Distributions, Springer, 1990, Heidelberg, p.p. 1 – 261.
[373] Philbin, T. G. American Journal of Physics, 2014, 82, 742 – 749.
[374] Senitzky, I. R. Phys Rev. 1954, 95, 1115 – 1116.
[375] Debye, P.; Anderson, H. R.; Brumberger, H. J. Appl. Phys. 1957, 28

, 679 – 683.

Anticipated audience of this multidisciplinary book comprises engineers, post-graduate students, researchers (of various levels of qualifications and specializations) and academicians working in areas of solid states and statistical physics, material science, semiconductor technology.

You have not viewed any product yet.