Hafnium: Chemical Characteristics, Production and Applications


HongYu Yu, PhD (Editor)
South University of Science, Technology of China, Shenzhen, China

Series: Chemistry Research and Applications
BISAC: SCI013000

Hafnium is a chemical element with the symbol Hf and atomic number 72. This book brings together contributions from experts in their related fields to illustrate the significance and importance of hafnium in different forms. This book is composed of six chapters written by experts in their respective fields making this book valuable to the group-IV materials science communities.

The subjects presented in the book offer a general overview of the important issues of various hafnium compounds, e.g. Hafnium nitride/Hafnium carbide application as a coating material, and Hafnium oxide application as the dielectric layer in non-volatile memory/state-of-the-art CMOS devices. We believe the book is of great scientific and educational value for many readers. Readers thus can familiarize themselves with the latest knowledge in the related fields.
(Imprint: Nova)

Table of Contents

Table of Contents


Chapter 1 – A Review on Hafnium: Synthesis, Properties and Applications of Variety of Hafnium Compounds (pp. 1-20)
Munusamy Thirumavalavan and Jiunn-Fwu Lee (Graduate Institute of Environmental Engineering, National Central University, Chung-Li, Taoyuan County, Taiwan)

Chapter 2 – Mechanical Engineering of Hafnium with Metal Transition Multilayers (pp. 21-50)
Cesar Escobar, Julio C. Caicedo and William Aperador (Thin-Film Group, Universidad del Valle – Cali; Tribology Polymers, Powder Metallurgy and Processing of Solid Recycled Research Group Universidad del Valle, Cali, and Facultad de Ingeniería, Universidad Militar Nueva Granda, Bogotá, Colombia)

Chapter 3 – Hafnium Carbide Coating: Properties of Bulk, Surface and Metal/HfC Interfaces (pp. 51-76)
H. Si Abdelkader and H. I. Faraoun (Division Etude et Prédiction des Matériaux, Unité de Recherche Matériaux et Energies Renouvelables.
LEPM-URMER. Université de Tlemcen – Algérie)

Chapter 4 – Stabilization of Higher Symmetry HfO2 Polymorphs As Thin Films and Nanoparticles (pp. 77-112)
Protima Rauwel and Erwan Rauwel (Dpt. of Physics, University of Tartu, Tartu, and Tartu College, Tallinn University of Technology, Tartu, Estonia)

Chapter 5 – Hafnium-Based Thin Oxides: Versatile Insulators for Microelectronics (pp. 113-136)
Albin Bayerl and Mario Lanza (Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, P. R. China)

Chapter 6 – Ultrathin Hafnium-Based High-K Dielectrics for High-K-Last / Gate-Last CMOS Integration Scheme (pp. 137-152)
Shu Xiang Zhang, Jiang Yan and HongYu Yu (Institute of Microelectronics of Chinese Academy of Sciences; Beitucheng West Road, ChaoYang District, Beijing, and South University of Science and Technology of China, 1088 Xueyuan Blvd, Nanshan District, Shenzhen, Guangdong, China)


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