Electron Gas: An Overview

Tata Antonia (Editor)

Series: Physics Research and Technology
BISAC: SCI074000



Volume 10

Issue 1

Volume 2

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Special issue: Resilience in breaking the cycle of children’s environmental health disparities
Edited by I Leslie Rubin, Robert J Geller, Abby Mutic, Benjamin A Gitterman, Nathan Mutic, Wayne Garfinkel, Claire D Coles, Kurt Martinuzzi, and Joav Merrick


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In Electron Gas: An Overview, the results of theoretical studies of the thermodynamic, kinetic, and high-frequency properties of the electron gas on the surface of a nanotube in a magnetic field in the presence of a longitudinal superlattice are presented.

Following this, an interpretation of the basic transport characteristics of metals, superconductors in the normal state, and very strongly doped semiconductors with degenerate electron gas is presented. An application of the effective density of randomly moving electrons allows for an explanation of the conductivity of metals, and the electron transport characteristics such as the average diffusion coefficient, the average mobility, the mean free path, and the electron scattering mechanisms in a wide temperature range.

Finally, the authors demonstrate high-performance InGaN-based light-emitting diodes with tunneling-junction-induced 2-D electron gas at an AlGaN/GaN heterostructure, which is inserted in the middle of the P++-GaN contact layer of a conventional LED structure.
(Imprint: Nova)


Chapter 1. Electron Gas on the Surface of a Nanotube: Thermodynamics, Dynamic Conductivity, and Collective Phenomena
(A.M. Ermolaev and G.I. Rashba, Theoretical Physics Department I.M. Lifshits, V.N. Karazin Kharkiv National University, Kharkov, Ukraine)

Chapter 2. Study of the Transport of Charge Carriers in Materials With Degenerate Electron Gas
(Vilius Palenskis and Evaras Žitkevičius, Faculty of Physics, Vilnius University, Vilnius, Lithuania, and others)

Chapter 3. Enhanced Output Power of Ingan-Based Light-Emitting Diodes with AlGaN/GaN Two-Dimensional Electron Gas Structure
(Jae-Hoon Lee, Yield Enhancement Team, Foundry, Samsung Electronics Co., Ltd, Giheung, Korea)


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