CVD Technologies and Basic Properties of SiNH-Contained Thin Films for Applications in Electronic Devices



Table of Contents

This online book provides a critical review of published experimental data for thin films of silicon nitride deposited by thermal and plasma chemical vapor deposition (CVD), plasma chemical vapor deposition (PECVD), high density plasma CVD (HDP-CVD), atomic layer-by-layer deposition (ALD), hot-wire chemical vapor deposition (HW-CVD). The data has been analyzed historically with a search depth of about 25 years. The focus is on the aspects of film growth. The preparation of thin films is described and the possibilities of their improvement are analyzed. The relationship between the composition of the film and physicochemical properties with the parameters of the deposition processes is considered. Comparative data on the properties of the films obtained using the above methods are presented.

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