Chemical Vapor Deposition (CVD): Methods and Technologies


Levi Karlsson (Editor)

Series: Chemical Engineering Methods and Technology

BISAC: SCI013000

Chemical vapor deposition (CVD) refers to a vacuum deposition method used to produce high quality, high-performance, solid materials in a variety of manufacturing industries. Chapter One provides a critical review of published experimental data for thin films of silicon nitride deposited by thermal and plasma CVD, plasma CVD, high density plasma CVD, atomic layer-by-layer deposition, and hot-wire CVD. Chapter Two describes several aspects of the use of CVD for single-crystal diamond synthesis for electronics. Chapter Three describes the properties of graphene and its preparation by a number of methods with a focus on the classical CVD method on copper foil together with graphene transfer onto a dielectric substrate.




Chapter 1. CVD Technologies and Basic Properties of SiNH-Contained Thin Films for Applications in Electronic Devices
(Vladislav Yu. Vasilyev – Semiconductors and Microelectronics Department, Faculty of Radio Engineering and Electronics, Novosibirsk State Technical University, Novosibirsk, Russia)

Chapter 2. Rapid-Heating Criterion in CVD Diamond Growth Technology and Possibility of Synthesizing Large Diamonds without High Pressure and Prepared Substrate
(Nickolay I. Alekseyev, Anton P. Broyko, Vladislav S. Khadutin, Ivan K. Khmelnitsky and Ivan V. Oreshko – Department of Micro and Nanoelectronics, Saint Petersburg Electrotechnical University “LETI,” St. Petersburg, Russia)

Chapter 3. Graphene Preparation by Chemical Vapour Deposition Method and its Basic Parameters
(P. Machac – Department of Solid State Engineering, University of Chemistry and Technology, Prague, Czech Republic)


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