B-doped SiGe(C) Materials for High Performance Devices

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Mohammadreza Kolahdouz, Henry H. Radamson and Reza Ghandi
Royal Institute of Technology, (KTH), Stockholm, Sweden

Series: Materials Science and Technologies
BISAC: TEC021000

This book deals with growth kinetics, dopant incorporation, thermal stability, strain compensation, strain relaxation and defect formation of B-doped SiGe layers grown by reduced pressure CVD. The ion implantation and some of its processing issues regarding B-doping are discussed. (Imprint: Nova)

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Table of Contents

Abstract

Introduction

A. Born Incorporation in Si-based materials

B. Modeling of Boron incorporation in Si/SiGe layers

C. Pattern dependency of B-doped SiGe growth

Conclusion

References

Index

Additional information

Binding