B-doped SiGe(C) Materials for High Performance Devices

Mohammadreza Kolahdouz, Henry H. Radamson and Reza Ghandi
Royal Institute of Technology, (KTH), Stockholm, Sweden

Series: Materials Science and Technologies
BISAC: TEC021000

Clear

$0.00

eBook

Digitally watermarked, DRM-free.
Immediate eBook download after purchase.

Product price
Additional options total:
Order total:

Quantity:

Details

This book deals with growth kinetics, dopant incorporation, thermal stability, strain compensation, strain relaxation and defect formation of B-doped SiGe layers grown by reduced pressure CVD. The ion implantation and some of its processing issues regarding B-doping are discussed. (Imprint: Nova)

Abstract

Introduction

A. Born Incorporation in Si-based materials

B. Modeling of Boron incorporation in Si/SiGe layers

C. Pattern dependency of B-doped SiGe growth

Conclusion

References

Index

You have not viewed any product yet.