Table of Contents
Table of Contents
Abstract
Introduction
A. Born Incorporation in Si-based materials
B. Modeling of Boron incorporation in Si/SiGe layers
C. Pattern dependency of B-doped SiGe growth
Conclusion
References
Index
B-doped SiGe(C) Materials for High Performance Devices
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Mohammadreza Kolahdouz, Henry H. Radamson and Reza Ghandi
Royal Institute of Technology, (KTH), Stockholm, Sweden
Series: Materials Science and Technologies
BISAC: TEC021000
This book deals with growth kinetics, dopant incorporation, thermal stability, strain compensation, strain relaxation and defect formation of B-doped SiGe layers grown by reduced pressure CVD. The ion implantation and some of its processing issues regarding B-doping are discussed. (Imprint: Nova)
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