Applications of RF Sputtered GEXSI1-X and GEXSI1-XOY Thin Films for Uncooled Infrared Detectors

Mukti M. Rana and Donald P. Butler
Delaware State University, USA, and others

Series: Physics Research and Technology
BISAC: SCI055000

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Edited by I Leslie Rubin, Robert J Geller, Abby Mutic, Benjamin A Gitterman, Nathan Mutic, Wayne Garfinkel, Claire D Coles, Kurt Martinuzzi, and Joav Merrick

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Uncooled infrared detectors or microbolometers are the thermal detectors whose resistance changes when infrared radiation falls onto it. Radio Frequency (RF) sputtered thin films of GexSi1-x and GexSi1-xOy have the property of changing their resistance by the heating produced when the infrared radiation falls on top of them. The thin films of GexSi1-x and GexSi1-xOy deposited by RF magnetron sputtering at room temperature from a single target of GexSi1-x in Ar or Ar : O2 environment result in a temperature coefficient of resistance (TCR) of ~5%/K at room temperature with moderate resistivity. The variations of silicon and oxygen concentrations in GexSi1-xOy thin films provide the opportunity for a parametric investigation of the dependence of the electrical and optical characteristics of the thin films on composition. (Imprint: Nova)

ABSTRACT

I. INTRODUCTION

II. THIN FILM DEPOSITION

III. PROPERTIES OF GEXSI1-X AND GEXSI1-XOY THIN FILM

IV. APPLICATIONS OF RF SPUTTERED GEXSI1-X AND GEXSI1-XOY FILMS: MICROBOLOMETER FABRICATION

V. BOLOMETER CHARACTERIZATION

VI. PERFORMANCE OF MICROBOLOMETER

VII. NOISE REDUCTION OF A-GEXSI1-XOY MICROBOLOMETER BY FORMING GAS PASSIVATION

VIII. EXPERIMENTAL DETAILS FOR FROMING GAS PASSIVATION

IX. RESULTS OF FORMING GAS PASSIVATION

IX. CONCLUSION

REFERENCES

INDEX

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