Advances in Engineering Research. Volume 29


Victoria M. Petrova (Editor)

Series: Advances in Engineering Research
BISAC: TEC009000

The first chapter of Advances in Engineering Research. Volume 29 describes the next generation device Stacked Nanosheet, which has the potential to replace the three-dimensional transistor architecture, FinFET. The authors also present the recent progress in complementary metal-oxide-semiconductor technology.

Recent biomimetic research examined in the next chapter may enable for a better understanding of biofiltration as well as potential technological applications via experimentation with novel materials, including 3D printed filters simulating natural systems.
The possibility of using methane as an alternative and promising reducing agent in various metallurgical and chemical processes is discussed.

Additionally, the electrochemical performances of transition-metal-disulfide-based electrodes fabricated from different configurations, including binary and ternary composites, is discussed.

Following this, this compilation discusses the assumptions of the physics of transport in nano-scale wire Si pn-junction diodes with the aid of device simulations. An advanced theoretical model to predict current-voltage characteristics of nano-scale wire Si pn-junction diodes is proposed.

The authors introduce several voltage contrast studies that have been done so far, introducing an experiment on active voltage contrast imaging of the cross-sectional surface of multilayer ceramic capacitors using helium ion microscopy.

Next, the authors present a new two-stage method for the qualitative and quantitative detection method of hydrophobing injection media used as a subsequent masonry seal against rising damp.

The aim of the final chapter is to review four classes of integer asymmetric codes and to illustrate their potential for use in modern short-range optical networks.
(Imprint: Nova)

Table of Contents

Table of Contents


Chapter 1. Performance Elements for Future CMOS Technology
(Gen Tsutsui, Heng Wu, and Chun Wing Yeung, IBM Research in Albany Nanotech, Albany, NY, USA)

Chapter 2. Variable Porosity of Throughput and Tangential Filtration in Biological and 3D Printed Systems
(Alexander J. Werth, PhD, Department of Biology, Hampden-Sydney College, Hampden-Sydney, VA, USA)

Chapter 3. Methane as an Alternative and Promising Reducing Agent in Various Metallurgical and Chemical Processes
(H. Ale Ebrahim, Chemical Engineering Department, Petrochemical Center of Excellency, Amirkabir University, Tehran Polytechnic, Tehran, Iran)

Chapter 4. Layered-Type Transition Metal Disulfides (TMDS) and Their Composites as Electrode Materials for Supercapacitors
(S.V. Prabhakar Vattikuti, School of Mechanical Engineering, Yeungnam University, Gyeongsan, South Korea)

Chapter 5. Semi-Microscopic Consideration of Minority Carrier Diffusion in Thin-SOI and Wire pn-Junction Devices
(Yasuhisa Omura, Department of Electrical, Electronics, and Information Eng., Kansai University, Suita, Osaka, Japan, and ACA, Isehara, Kanagawa, Japan)

Chapter 6. Active Voltage Contrast Imaging for Measuring Electrical Potential Distribution Using Helium Ion Microscopy
(Chikako Sakai, and Daisuke Fujita, National Institute of Technology, Nara College, Nara, Japan, and National Institute for Materials Science, Tsukuba Ibaraki, Japan)

Chapter 7. Two-Stage Study Program to Demonstrate the Effectiveness of Injections in Capillary Masonry Structures by Using the ESEM
(Peter Körber, PhD, University of Pécs, Faculty of Engineering and Information Technology, Hungary, in cooperation with University of Applied Science Wismar, Faculty of Engineering, Germany)

Chapter 8. Integer Asymmetric Error Control Codes for Short-Range Optical Networks
(Aleksandar Radonjic, and Vladimir Vujicic, Institute of Technical Sciences of the Serbian Academy of Sciences and Arts, Belgrade, Serbia)


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